Growth,Characterization and Micro-pattern Fabrication of Iridium/Si_3N_4/Si(100) Thin Films  

作　　者：吴旻 

机构地区：[1]State Key Laboratory of Advanced Technology for Materials Synthesis and Processing,Wuhan University of Technology

出　　处：《Journal of Wuhan University of Technology(Materials Science)》2008年第1期109-112,共4页武汉理工大学学报（材料科学英文版）

基　　金：the National Natural Science Foundation of China(No.50472043);Program for New Century Excellent Talents in University(No.NCET-06-0658);the Scientific Research Foundation for the Returned Overseas Chinese Scholars(SRF for ROCS)of MOE,China(No.2003-406)

摘　　要：Iridium thin films have been deposited on Si3N4（100 nm）/Si（100） substrates by magnetron sputtering. And then iridium film micro-patterns were fabricated by ion milling technique. The atomic force microscopy （AFM） measurements reveal that there is a very fiat and smooth surface with an average roughness of 0.64 nm for the iridium films. The X-ray diffraction also reveals that the deposited iridium films have a polycrystalline microstructure with （111） plane preferential orientation. The electrical resistivity of the iridium films was also measured and discussed.Iridium thin films have been deposited on Si3N4（100 nm）/Si（100） substrates by magnetron sputtering. And then iridium film micro-patterns were fabricated by ion milling technique. The atomic force microscopy （AFM） measurements reveal that there is a very fiat and smooth surface with an average roughness of 0.64 nm for the iridium films. The X-ray diffraction also reveals that the deposited iridium films have a polycrystalline microstructure with （111） plane preferential orientation. The electrical resistivity of the iridium films was also measured and discussed.

关 键 词：iridium film magnetron sputtering CHARACTERIZATION 

分 类 号：TB383.2[一般工业技术—材料科学与工程]