Novel High PSRR Current Reference Based on Subthreshold MOSFETs  

作　　者：YU Guoyi JIN Hai ZOU Xuecheng 

机构地区：[1]Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, Hubei, China [2]College of Computer Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, Hubei, China

出　　处：《Wuhan University Journal of Natural Sciences》2008年第1期71-74,共4页武汉大学学报（自然科学英文版）

基　　金：Supported by the National Natural Science Foundation of China (60376019)

摘　　要：This paper takes full advantages of the I-V transconductance characteristics of metal-oxide semiconductor field effect transistor （MOSFET） operating in the subthreshold region and the enhancement pre-regulator technique with the high gain negative feedback loop. The proposed reference circuit, designed with the SMIC 0.18 μm standard complementary metal-oxide semiconductor （CMOS） logic process technology, exhibits a stable current of about 1.701 μA with much low temperature coefficient （TC） of 2.5×10^-4μA/℃ in the temperature range of-40 to 150℃ at 1.5 V supply voltage, and also achieves a best PSRR over a broad frequency. The PSRR is about - 126 dB at DC frequency and remains -92 dB at the frequency higher 100 MHz. Moreover the proposed reference circuit operates stably at the supply voltage higher 1.2 V and has good process compatibility.This paper takes full advantages of the I-V transconductance characteristics of metal-oxide semiconductor field effect transistor （MOSFET） operating in the subthreshold region and the enhancement pre-regulator technique with the high gain negative feedback loop. The proposed reference circuit, designed with the SMIC 0.18 μm standard complementary metal-oxide semiconductor （CMOS） logic process technology, exhibits a stable current of about 1.701 μA with much low temperature coefficient （TC） of 2.5×10^-4μA/℃ in the temperature range of-40 to 150℃ at 1.5 V supply voltage, and also achieves a best PSRR over a broad frequency. The PSRR is about - 126 dB at DC frequency and remains -92 dB at the frequency higher 100 MHz. Moreover the proposed reference circuit operates stably at the supply voltage higher 1.2 V and has good process compatibility.

关 键 词：current reference voltage regulator low voltage SUBTHRESHOLD CMOS integrated circuit 

分 类 号：TN432[电子电信—微电子学与固体电子学]