CIGS薄膜材料研究进展  

The progress of CIGS thin film

作　　者：肖健平[1] 何青[2] 陈亦鲜[1] 夏明[1] 

机构地区：[1]西南民族大学电气信息工程学院,四川成都610041 [2]南开大学光电子薄膜器件与技术研究所,天津300071

出　　处：《西南民族大学学报（自然科学版）》2008年第1期189-193,共5页Journal of Southwest Minzu University(Natural Science Edition)

摘　　要：CIGS薄膜太阳电池具有低成本、高效率、性能稳定等优点,是最有发展前途的太阳能电池之一,受到了广泛关注.阐述了CI(G)S材料特性,分别介绍了多种制备方法,其中着重介绍共蒸发三步法这一制备小面积高效率电池的通用方法和在产业化生产中更理想的溅射后硒化法.CIGS is one of the most promising materials for thin film photovoltaic devices due to cost-effective, high efficiency and stability. Characteristics of CIGS thin films are presented. Preparation techniques are introduced. Two preparation methods are discussed in detail. Three-stage co-evaporation process comes to be viewed as laboratory standards of fabricating high-efficiency CIGS solar cell. Sputtering and selenization techniques stand out as a suitable industrial large area module production.

关 键 词：CIGS薄膜 共蒸发三步法 溅射后硒化 

分 类 号：O56[理学—原子与分子物理]