超短脉冲激光烧蚀半导体表面的热效应分析  

The thermal analysis of ultrashort laser pulse ablation on semiconductor surface

作　　者：黎小鹿[1] 李俊[1] 陶向阳[1] 

机构地区：[1]江西师范大学物理与通信电子学院,南昌330022

出　　处：《激光技术》2007年第6期624-626,629,共4页Laser Technology

摘　　要：为了研究超短激光辐照下半导体表面的热效应,采用有限差分法对双温方程进行了数值模拟,研究了飞秒、皮秒激光作用下,半导体表面载流子和晶格的温度分布情况。结果表明,载流子与晶格的温度耦合时间和金属耦合时间大致相同,激光功率密度是影响载流子温升的主要因素,超短脉冲激光入射时能量主要被半导体表层载流子吸收,所得结论与实验结果较吻合。To describe ultrashort laser ablation on semiconductor surface, numerical simulation of the double-temperature equation is performed by finite-difference method. The temperature fields of femtosecond, picosecond pulses laser ablation on semiconductor are showed. The results indicate that metal and semiconductor have the same time of the couple with carrier temperature and lattice temperature. Laser pulse power density is the main factors affecting temperature of carrier, the simulation results are accorded with the exoeriment reoorted bv others.

关 键 词：激光物理 飞秒激光 有限差分法 半导体 双温方程 

分 类 号：TN241[电子电信—物理电子学]