电化学刻蚀半导体的结构分析  

Structure Analysis of Electrochemical Etching Semiconductor

作　　者：申慧娟[1] 

机构地区：[1]仰恩大学信息与计算机学院电子工程系,福建泉州362014

出　　处：《微纳电子技术》2008年第2期97-99,113,共4页Micronanoelectronic Technology

摘　　要：结合多孔硅(Si)、多孔砷化镓(GaAs)以及多孔磷化铟(InP)的不同孔形貌,综合分析了元素半导体硅及Ⅲ-Ⅴ族化合物半导体GaAs、InP的刻蚀结构,系统地阐述了晶体结构在电化学刻蚀中的作用。化合物半导体由于存在晶格极化和各向异性,使得不同晶面的溶解速率或钝化速率不同,导致孔沿着溶解速率较大的方向生长,钝化速率较大的晶面成为孔壁,在一定程度上影响了孔的形状、大小及周期性排列等特征。用电流控制模型对不同孔的生长过程进行了较好的解释,进一步证明了晶体的结构特征对其产生的重要影响。Based on the different morphologies of porous silicon, porous GaAs and porous InP, the etching structure of element semiconductor silicon and Ⅲ-Ⅴ group compound semiconductors GaAs, InP were analyzed. The role of crystal structure in electrochemical etching was discussed systematically. The dissolution rate and passivation speed for various crystalplanes are different due to polarization of lattice and anisotropy in the compound semiconductors, as a result that the pores grow along the direction of the higher speed and the crystalfaces with the faster passibvation rate turn to porous wall, which influnce on the characteristics such as shape, size and arranged periodicity to some extent. The growth process was explained well by use of current diffusion limited model, and the effect of crystal structure on electrochemical etching process was presented.

关 键 词：电化学刻蚀 多孔硅 电流控制模型 晶格极化 形貌 

分 类 号：TN304.12[电子电信—物理电子学] TN304.23