CMOS带隙基准源研究现状  

An Overview of the Research on CMOS Bandgap Reference Sources

作　　者：幸新鹏[1] 李冬梅[2] 王志华[1] 

机构地区：[1]清华大学微电子研究所,北京100084 [2]清华大学电子工程系,北京100084

出　　处：《微电子学》2008年第1期57-63,71,共8页Microelectronics

基　　金：国家自然科学基金资助项目(60475018);北京市科技计划资助项目(D0305004040221-2-05)

摘　　要：带隙基准源是集成电路中的重要单元,输出不随温度、电源电压变化的基准电压或电流。简单介绍了CMOS带隙基准源的基本工作原理;指出了限制其性能的主要因素;分析了低电源电压、低功耗、高精度和高PSRR四种类型的CMOS带隙基准源。Bandgap reference source is an important unit in integrated circuits, which supplied reference voltage or current independent of temperature and supply voltage. The principle of CMOS bandgap reference source was described, and the design challenge was pointed out. Finally, CMOS bandgap reference sources with low supply voltage, low power, high precision and high PSRR were analyzed, respectively.

关 键 词：带隙基准源 低电源电压 低功耗 高精度 高PSRR 

分 类 号：TN432[电子电信—微电子学与固体电子学]