多发射极指分段结构功率SiGe HBT的热分析  

Thermal Analysis of Power SiGe Heterojunction Bipolar Transistor with Novel Segmented Multi-Emitter Structure

作　　者：王扬[1] 张万荣 谢红云[1] 金冬月[1] 邱建军[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100022

出　　处：《微电子学》2008年第1期81-84,119,共5页Microelectronics

基　　金：国家自然科学基金资助项目(60376033);北京市教委资助项目(KM200710005015);北京工业大学第5届研究生科技基金资助项目(ykj-2006-282);北京市属市管高等学校人才强教计划资助项目(102(KB)-00856)

摘　　要：提出了一种有效的方法—采用多发射极指分段结构来增强功率SiGe HBT的热稳定性。为了对分段结构进行精确的热分析,针对器件多层结构的特点,建立起适当的热模型,模型中充分考虑了各个部分的热阻。根据此热模型,使用有限元方法,对一个十指的分段结构功率SiGe HBT进行了热模拟。考虑到模拟的精确性及软件的功能限制,采用两步模拟法:衬底模拟和有源区模拟。通过模拟,得到了发射极指的三维温度分布。结果表明,分段结构功率HBT的最高结温和热阻都明显低于完整发射极指结构,新结构有效地提高了器件的热稳定性。An effective method for enhancing thermal stability of a multi-emitter power heterojunction bipolar transistor （HBT） was presented. A suitable thermal model, which includes various thermal resistances of different components, was built for the segmented multi-emitter HBT. Using this model, thermal simulation for a ten-finger power SiGe HBT with segmented emitter structure was conducted with ANSYS software. Considering the precision of the simulation and the restriction of ANSYS software, a two-step simulation method was proposed： 1） substrate simulation and 2） active region simulation. Three-dimensional temperature distribution on emitter fingers was obtained from simulation. Compared with non-segmented structure, the maximum junction temperature, thermal resistance of the power HBT with improved structure was significantly lower as expected, and the thermal stability was improved.

关 键 词：SIGE HBT 分段结构 热阻模型 热模拟 

分 类 号：TN322.8[电子电信—物理电子学]