大马士革镶嵌结构对Cu膜微结构及应力的影响  

Impact of Damascene Inlayed Fabric on Microstructure and Stress of Cu Films

作　　者：王晓冬[1] 吉元[2] 李志国[3] 夏洋[4] 刘丹敏[2] 肖卫强[2] 

机构地区：[1]中国人民武装警察部队学院基础部,河北廊坊065000 [2]北京工业大学固体微结构与性能研究所,北京100022 [3]北京工业大学电子信息与控制工程学院,北京100022 [4]中国科学院微电子中心,北京100029

出　　处：《微电子学》2008年第1期89-92,共4页Microelectronics

基　　金：国家自然科学基金资助项目(69936020)

摘　　要：通过TEM、SEM、XRD和EBSD,观察了Cu互连线和平坦Cu膜的微观结构。采用薄膜应力测试分布仪和二维面探测器XRD,测量了平坦Cu膜和Cu互连线的应力,计算了Cu薄膜热应力的理论值。凹槽侧壁成为互连线新的形核区域,并且在平行于侧壁的方向形成较弱的(111)织构。与平坦膜相比,互连线晶粒尺寸明显变小(、111)织构较弱,且存在大量Σ3和Σ9晶界。平坦膜和互连线分别表现出压应力和张应力。降温过程产生的热应力为互连线的主要应力。Microstructure of Cu interconnects and blanket films were analyzed by using TEM. SEM. XRD and EBSD. The film stress was studied using stress distribution measurement system and two-dimensional XRD; also, the theoretical value of the film stress was calculated. The trench sidewall of lines could serve as grain nucleation sites, while a weak （111） texture was observed in flat regions parallel to the direction of sidewalls. Smaller grain size and weaker （111） texture in lines were formed, compared to blanket films. Furthermore, lines have more ∑3 and ∑9 boundaries. Both blanket films and lines exhibited compressive and tensile stresses, respectively. And thermal stress is dominant in lines.

关 键 词：Cu互连线 大马士革镶嵌结构 凹槽 晶体学取向 

分 类 号：TN406[电子电信—微电子学与固体电子学]