BaBSi玻璃对ZnVSb基压敏电阻结构与性能的影响  

The Effects of Doping Ba-B-Si Frits on the Microstructure and Properties of Zn-V-Sb Based Varistor

作　　者：刘佳骥[1] 赵鸣[1] 高峰[1] 田长生[1] 

机构地区：[1]西北工业大学材料学院,陕西西安710072

出　　处：《压电与声光》2008年第1期112-114,共3页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目(60501015);陕西省自然科学基金资助项目(N6CS0001)

摘　　要：通过传统工艺制备出Ba-B-Si玻璃相掺杂的Zn-V-Sb基压敏电阻材料,研究了其微观结构及性能。结果表明,Ba-B-Si玻璃相的掺杂能降低Zn-V-Sb基压敏电阻试样的烧结温度,玻璃相中B2O3的含量过多,会使ZnO压敏电阻材料的伏安(V-I)特性变差;而Ba2+含量的增加,使ZnO压敏电阻材料的非线性系数上升。Zn V-Sb based varistor ceramics doped with Ba-B-Si frits were prepared and the microstructure and properties were investigated. The results revealed that the sintering temperatures of Zn-V-Sb based ceramics would decline with doping Ba-B-Si frits. The V-I properties of samples got worse with extra B2O2 ,while nonlinearity exponent of Zn-V-Sb ceramics rised with ascension of BaO.

关 键 词：Ba-B-Si玻璃相 压敏电阻 烧结温度 掺杂 

分 类 号：TQ174.01[化学工程—陶瓷工业]