量子阱结构对GaInP/Ga(In)As/Ge电池的光谱响应改善  

Spectral response improvement of GaInP/Ga(In)As/Ge triple-junction solar cell with quantum wells

作　　者：许军[1] 刘海港[1] 王帅[1] 孙强[1] 孙彦铮[1] 王保民[1] 

机构地区：[1]中国电子科技集团公司第十八研究所,天津300381

出　　处：《电源技术》2008年第2期113-114,共2页Chinese Journal of Power Sources

摘　　要：采用MOCVD工艺制备具有应变平衡量子阱结构GaInP/Ga(In)As/Ge三结太阳电池的方法,及量子阱结构对中间电池的光谱响应的改善,从而使GaInP/Ga(In)As/Ge三结太阳电池各子电池电流匹配设计更为合理,揭示了量子阱结构提高GaInP/Ga(In)As/Ge三结级联太阳电池光电转换效率的可能性。GalnP/Ga （In）As/Ge triple-junction solar cell with stain balance quantum wells （SBQW） prepared by MOCVD technology was introduced, the middle solar cell spectral response was improved by using SBQW, so the short current of each subwell became more reasonable for the GalnP/Ga （In）As/Ge triple-junction solar cell, and it was discovered that SBQW had the capacity to improve the photoelectdcity quality of the GalnP/Ga （In）As/Ge triple-junction solar cell.

关 键 词：周期应变平衡量子阱结构 三结级联太阳电池 电流匹配 光谱响应 量子效率 

分 类 号：TM914[电气工程—电力电子与电力传动]