硅纳米板杨氏模量的尺度效应  

Scale Effect on Young's Modulus of a Silicon Nano-Plate

作　　者：王静[1] 黄庆安[1] 于虹[1] 

机构地区：[1]东南大学MEMS教育部重点实验室,南京210096

出　　处：《纳米技术与精密工程》2007年第4期242-244,共3页Nanotechnology and Precision Engineering

基　　金：国家重点基础研究发展计划(973)项目(2006CB300404);国家高技术研究(863)项目(2006AA04Z302)

摘　　要：硅微机械加工的梁、桥和板是微纳器件的基本结构;杨氏模量是描述力学性能的基本参数.用半连续方法计算了不同厚度的(001)硅纳米板沿[100]方向和[110]方向的应变能,并由此得到了两个方向上的杨氏模量.结果表明,沿[100]和[110]方向的硅纳米板杨氏模量均随着板厚度的减小而减小,并且减小的趋势随着板厚度的减小越来越明显.当板厚度逐渐增加超过50 nm时,两个方向上的杨氏模量均趋于定值,且都接近体硅的值.The calculation of mechanical proporties of silicon nanostructures plays an important role in developing the physical theories and computational design tools that describe the motion and operation of silicon nanodevices, and Young＇ s modulus is the basal parameter of mechanical proporties. The semi-continuum approach was used to obtain the Young＇s moduli of the （001） silicon nano-plate along [100] and [110] directions. It is shown that the Young＇s moduli of the silicon nano-plate along the two directions decrease with the decrease of the thickness of the nano-plate, and the decrease becomes significant when the thickness scaling down to a few tens of nanometers. The Young＇s moduli along the two directions approach the constants which am close to that of bulk-silicon when the thickness of nano-plate is over 50 nm.

关 键 词：纳米板 杨氏模量 尺度效应 

分 类 号：TB383.1[一般工业技术—材料科学与工程]