Growth of Fluorocarbon Films by Low-Pressure Dielectric Barrier Discharge  被引量:1

Growth of Fluorocarbon Films by Low-Pressure Dielectric Barrier Discharge

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作  者:李伟 谭晓东 刘东平 刘艳红 冯忠庆 陈宝佯 

机构地区:[1]School of Science, Dalian Nationality University, Dalian 116600, China School of Mechanical Engineering, Dalian Jiaotong University, Dalian 116021, China [2]School of Mechanical Engineering, Dalian Jiaotong University, Dalian 116021, China [3]School of Science, Dalian Nationality University, Dalian 116600, China [4]State Key Laboratory for Material Modification by Laser, Ion, and Electron Beams, Dalian University of Technology, Dalian 116024, China

出  处:《Plasma Science and Technology》2008年第1期74-77,共4页等离子体科学和技术(英文版)

基  金:National Natural Science Foundation of China(No.10405005)

摘  要:Plasma polymerized fluorocarbon (FC) films have been deposited on silicon substrates from dielectric barrier discharge (DBD) plasma of C4Fs at room temperature under a pressure of 25~125 Pa. The effects of the discharge pressure and frequency of power supply on the films have been systematically investigated. FC films with a less cross linked structure may be formed at a relatively high pressure. Increase in the frequency of power supply leads to a significant increase in the deposition rate. Static contact angle measurements show that deposited FC films have a stable, hydrophobic surface property. All deposited films show smooth surfaces with an atomic surface roughness. The relationship between plasma parameters and the properties of the deposited FC films are discussed.Plasma polymerized fluorocarbon (FC) films have been deposited on silicon substrates from dielectric barrier discharge (DBD) plasma of C4Fs at room temperature under a pressure of 25~125 Pa. The effects of the discharge pressure and frequency of power supply on the films have been systematically investigated. FC films with a less cross linked structure may be formed at a relatively high pressure. Increase in the frequency of power supply leads to a significant increase in the deposition rate. Static contact angle measurements show that deposited FC films have a stable, hydrophobic surface property. All deposited films show smooth surfaces with an atomic surface roughness. The relationship between plasma parameters and the properties of the deposited FC films are discussed.

关 键 词:fluorocarbon films dielectric barrier discharge X-ray photoelectron spectrometry 

分 类 号:TM83[电气工程—高电压与绝缘技术]

 

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