Resonant tunneling properties of photonic crystals consisting of single-negative materials  

作　　者：DENG XinHua LIU NianHua 

机构地区：[1]Department of Physics, Nanchang University, Nanchang 330031, China

出　　处：《Chinese Science Bulletin》2008年第4期529-533,共5页

基　　金：Supported by the National Natural Science Foundation of China (Grant Nos. 60268001 and 10664002) ;Science Foundation of Nanchang University

摘　　要：We studied the resonant tunneling properties of one-dimensional photonic crystals consisting of single-negative permittivity and single-negative permeability media using transfer matrix methods.The results show that there exists a pair of resonant tunneling modes in this structure.The separation of the pair of tunneling modes can be tuned by varying the ratio of thicknesses of the two single-negative layers or the thickness of the defect layer.The electric field intensity of the resonant tunneling modes increases rapidly with the increase of the ratio of thicknesses of the two single-negative layers.The peak value of the field intensity of the resonant tunneling modes is enhanced by one order of magnitude when the ratio of thicknesses of the two single-negative layers increases by 0.4.This property will be applied widely in the field of nonlinearity optics.With the increase of the ratio of thicknesses of the two single-negative layers,the electric field of the tunneling modes becomes more localized,and the full width at half maximum of the tunneling modes becomes narrower.Besides,the pair of tunneling modes is insensitive to incident angle and thickness fluctuation.These properties will be used for the design of tunable omnidirectional double-channel filter with high quality factor.We studied the resonant tunneling properties of one-dimensional photonic crystals consisting of single-negative permittivity and single-negative permeability media using transfer matrix methods. The results show that there exists a pair of resonant tunneling modes in this structure. The separation of the pair of tunneling modes can be tuned by varying the ratio of thicknesses of the two single-negative layers or the thickness of the defect layer. The electric field intensity of the resonant tunneling modes increases rapidly with the increase of the ratio of thicknesses of the two single-negative layers. The peak value of the field intensity of the resonant tunneling modes is enhanced by one order of magnitude when the ratio of thicknesses of the two single-negative layers increases by 0.4. This property will be applied widely in the field of nonlinearity optics. With the increase of the ratio of thicknesses of the two single-negative layers, the electric field of the tunneling modes becomes more localized, and the full width at half maximum of the tunneling modes becomes narrower. Besides, the pair of tunneling modes is insensitive to incident angle and thickness fluctuation. These properties will be used for the design of tunable omnidirectional double-channel filter with high quality factor.

关 键 词：单阴极材料 光子晶体 共振隧道效应 介电常数 

分 类 号：TM21[一般工业技术—材料科学与工程]