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作 者:刘丽来[1] 闫红丹[1] 尚杰[1] 李学铭[1] 张鹏翔[1]
机构地区:[1]昆明理工大学光电子新材料研究所,云南昆明650051
出 处:《材料科学与工程学报》2008年第1期104-106,共3页Journal of Materials Science and Engineering
摘 要:本文提出了一种在多孔阳极氧化铝(Anodic Aluminum Oxide)模板中直接直流电沉积铁纳米线的新方法。采用阶梯降压法减薄致密的阻挡层,以Al基底为阴极,铂电极为阳极,直接在制备AAO模板的装置中进行直流电沉积。用SEM对制备的AAO模板及铁纳米线进行了形貌表征,结果表明:制备的铁纳米线分布均匀,直径约为50nm,粗细与模板的孔径基本相同。本实验工艺简单,同时避开了AAO模板薄、脆、易碎的特点,从而使制备大面积的铁纳米线成为了可能。A new method was presented for iron nanowires deposition in Anodic Aluminum Oxide (AAO) template by direct current. The barrier layer of AAO was removed by Ladder-relief way, Al substrate for a cathode and Pt electrode as an anode. We prepared iron nanowires by direct current deposition in the device of AAO directly. The experimental process was simple, while avoiding the characteristics of AAO as thin and brittle. SEM shows that the diameter of nanowires was consistent with pore diameters which were about 50nm. We provided a new method which makes the preparation of large-scale nanowires become possible.
分 类 号:TB383[一般工业技术—材料科学与工程]
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