图谱分析退火对本征SnO_2多晶薄膜性能的影响  

Spectral Analysis of Effects of Annealing on the Characteristics of Intrinsic SnO_2 Polycrystalline Thin Films

作　　者：曾广根[1] 郑家贵[1] 黎兵[1] 陈奇[1] 武莉莉[1] 李卫[1] 张静全[1] 雷智[1] 蔡亚平[1] 蔡伟[1] 冯良桓[1] 

机构地区：[1]四川大学材料系,四川成都610064

出　　处：《光谱学与光谱分析》2008年第2期468-471,共4页Spectroscopy and Spectral Analysis

基　　金：国家高技术研究与发展计划项目(2001AA513010);国家自然科学基金项目(60506004);博士点基金项目(20050610024);四川省应用基础项目(2006J13-083)资助

摘　　要：提高CdTe太阳电池转换效率的有效途径之一是适当减薄CdS窗口层,减薄了的CdS层会严重影响电池性能,解决方法是在窗口层和透明导电膜之间加一层高阻本征SnO2薄膜。采用反应磁控溅射制备了具有高阻抗的本征SnO2薄膜,并对其进行了后处理,利用XRD,XPS等方法研究了退火前后薄膜的结构,成分及表面化学状态的变化。结果表明:经N2/O2=4:1气氛550℃(0.5h)退火后,样品由非晶态转变为四方相结构的多晶薄膜,具有(110)择优取向;XPS分析表明退火后薄膜的氧含量增加、O(1s)峰向低能方向移动,SnO被氧化成SnO2,使得薄膜的透过率增大,退火后的本征SnO2高阻膜非常适合作为过渡层应用于CdTe太阳电池中。In order to improve the conversion efficiency of the CdTe solar cells, it is necessary to decrease the thickness of CdS layer. However, the decrease in CdS thickness may lead to adverse effects on the solar cells. Therefore, a high-resistance transparent layer （intrinsic SnO2 ） has been used as a buffer layer between the transparent conducting oxide （TCO） and CdS layer. In the present paper, SnO2 polycrystalline thin films were prepared by magnetic reactive sputtering. The properties of the films before and after annealing were studied by XRD and XPS. The results revealed that the films annealed at 550 ℃ for 30 minutes are polycrystalline SnO2 with a single phase of tetragonal structure and have orientation of （110） direction. XPS investigation shows that after annealing the oxygen content of the film increases, O1s peak shifts to lower energies, and SnO is oxidized into SnO2, After annealing the intrinsic SnO2 films of high-resistance as a buffer layer are very suitable for the CdTe solar cells.

关 键 词：SNO2 透明高阻膜 XPS CdTe电池 

分 类 号：TM914.42[电气工程—电力电子与电力传动] TN304.21[电子电信—物理电子学]