双栅双应变沟道全耗尽SOI MOSFETs的特性分析  

Characteristics of Double-Gate,Dual-Strained-Channel,Fully-Depleted SOI MOSFETs

作　　者：高勇[1] 孙立伟[1] 杨媛[1] 刘静[1] 

机构地区：[1]西安理工大学自动化学院电子工程系,西安710048

出　　处：《Journal of Semiconductors》2008年第2期338-343,共6页半导体学报（英文版）

基　　金：西安市应用材料创新基金资助项目(批准号:XA-AM-200514)~~

摘　　要：提出了一种全新的器件结构——双栅双应变沟道全耗尽SOIMOSFETs,模拟了沟道长度为25nm时器件的电学特性.工作在单栅模式下,应变沟道(Ge=0.3)驱动能力与体Si沟道相比,nMOS提高了43%,pMOS提高了67%;工作在双栅模式下,应变沟道(Ge=0.3)与体Si沟道相比较,驱动电流的提高nMOS为31%,pMOS为60%.仿真结果表明,双栅模式比单栅模式有更为陡直的亚阈值斜率,更高的跨导以及更强的抑制短沟道效应的能力.综合国内外相关报道,该结构可以在现今工艺条件下实现.A novel fully-depleted SOl device structure with a double-gate and dual-strained channel is presented. The electrical characteristics of this device with the effective gate length scaled down to 25nm are simulated. When the Ge content reaches 30%,by the adoption of a single-gate （SG） control mechanism,the drive currents are improved by 43 % and 67%, respectively, for the strained-Si n-MOSFET and the strained-SiGe p-MOSFET over their unstrained counterparts. By adopting double-gate （DG） control mechanisms, the similar enhancements are 31% and 60%,respectively. The simulation results show that the DG MOSFETs exhibit a steeper subthreshold slop,a higher transconductance,and a stronger capacity to restrict short-channel-effects over SG MOSFETs. The new structure can be achieved with today＇s semiconductor manufacturing level.

关 键 词：双栅 双应变沟道 短沟道效应 

分 类 号：TN386[电子电信—物理电子学]