高体分SiCp/Mg复合材料真空压力浸渗制备工艺研究  

Fabricating process of high volume fraction SiCp/Mg composites by vacuum pressure infiltration

作　　者：汪志太[1] 余欢[1] 徐志锋[1] 严青松[1] 蔡长春[1] 

机构地区：[1]南昌航空大学材料科学与工程学院,江西南昌330063

出　　处：《南昌航空大学学报（自然科学版）》2007年第2期1-4,20,共5页Journal of Nanchang Hangkong University(Natural Sciences)

基　　金：江西省自然科学基金项目(0650121)

摘　　要：进行了真空压力浸渗法制备高体积分数SiCp/Mg复合材料的工艺实验。结果表明,真空压力浸渗法具有良好的渗流条件,避免了气体和夹杂物的裹入等问题;在压力为300 kPa、温度为973 K及保压时间为5 min条件下,成功渗透了振实堆积的单一尺寸SiCp多孔体的最小粒径为32μm;浸渗后的复合材料中SiCp体积分数达到了58.21%。经OM、XRD分析表明,镁液渗透均匀,复合材料内部组织致密,无明显的孔洞及夹杂等铸造缺陷。The high volume fraction SiCp/Mg composites were fabricated by vacuum pressure infiltration process.The results show that infiltration was effectively promoted by vacuum pressure infiltration process,which also avoids the gas and the inclusion binds.The preform of a single minimum SiC particle with size of 32μm and volume fractions of 58.21% is successful infiltrated under the pressure of 300kPa,holding time of 5 min and temperature of 973K.The analysis results by OM and XRD indicate that SiC particles are uniformly distributed in the magnesium matrix without casting defects,such as bubble,shrinkage,inclusion.

关 键 词：复合材料 SiCp/Mg 制备工艺 高体积分数 

分 类 号：TB331[一般工业技术—材料科学与工程]