半导体桥点火器的设计与研究  

Study and Design on the SCB Igniter

作　　者：任炜[1] 周智[1] 刘举鹏[1] 

机构地区：[1]中国兵器工业第213研究所,陕西西安710061

出　　处：《火工品》2007年第6期43-46,共4页Initiators & Pyrotechnics

摘　　要：设计了两种半导体桥,对其发火能量进行估算,利用原子发射光谱双谱线法对其等离子体的温度进行测试;采用这两种半导体桥,设计得到两种不同性能的半导体桥点火器,对两种点火器进行不发火试验、发火试验以及作用时间测定。结果表明:1Ω半导体桥满足1A、1W、5min不发火要求,在28μF、27V的发火条件下,平均作用时间为363μs;3Ω半导体桥满足0.6A、1W、5min不发火要求,在28μF、50V发火条件下,平均作用时间为147μs。Two kinds of semiconductor bridge（SCB） were designed, the fire energy of SCB was approximately calculated ,and based on the double line of atomic emission method, the SCB plasma temperature was measured. By use of two SCB, two kinds of SCB igniters were designed, no fire test, fire test, and function time measure test have been done. The test results showed that the igniter with 1Ω SCB can meet with the no fire demand（1A, 1W,5min）, under the 28μF ,27V fire condition, its average function time is 363μs, at the same time, the igniter with 3Ω SCB can also meet with no fire demand（0.6A, 1W, 5min）, under the 28μF, 50V fire condition, its average function time is 147μs.

关 键 词：半导体桥 点火器 性能 等离子体 

分 类 号：TJ450.2[兵器科学与技术—火炮、自动武器与弹药工程]