铜掺杂类金刚石纳米点阵列的制备及场发射性能研究  

Research on the Preparation of Cu-doped Diamond-like Carbon Nanodot Arrays and Their Excellent Field Emitting Properties

作　　者：崇二敏[1] 李晓春[1] 李春[1] 闫鹏勋[1] 张鹏举[1] 刘洋[1] 范晓彦[1] 

机构地区：[1]兰州大学物理科学与技术学院,兰州730000

出　　处：《人工晶体学报》2008年第1期29-32,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金项目(No.60376039)

摘　　要：利用磁过滤等离子体结合氧化铝模板(AA0)技术在室温下制备了具有优异场发射性能的铜掺杂类金刚石(DLC)纳米点阵列。微观分析表明,铜掺杂类金刚石纳米点阵列分布均匀,密度高达109cm-2;利用X射线光电子能谱对制备的铜掺杂类金刚石纳米点阵列进行结构分析,测得铜的掺杂量为3.6%且sp3键含量高达60%;通过对铜掺杂类金刚石纳米点阵列的场发射性能测试,试验结果表明,铜掺杂类金刚石纳米点阵列开启电场和阈值电场分别为0.08V/μm,0.42V/μm,并且在电场值为0.67V/μm时,发射电流密度高达95mA/cm2,场发射性能明显优于无掺杂类金刚石纳米点阵列。Cu-doped diamond-like carbon （DLC） nanodot arrays with excellent field emitting properties were fabricated on the AAO template by the filtered cathodic arc plasma technique. Microscopic analysis displayed that the Cu-doped DLC nanodots were very uniformly distributed, the nanodot density was estimated to ～ 10^9cm^-2; The surface chemical compositions and bonding configurations were determined by X-ray photoelectron spectrometry （XPS）. The results reveal that the Cu-doped content and the fraction of sp3 bonded carbon atoms were 3.6% and 60%, respectively. Field emission properties of the Cu-doped DLC nanodot arrays and undoped DLC nanodot arrays were investigated. A low turn-on field of 0.08V/μm and threshold field of 0.42V/μm were achieved, and a high-emission current density of 95mA/cm2 under an applied field of 0.67V/μm also was obtained, which were superior to undoped DLC nanodot arrays.

关 键 词：磁过滤等离子体 铜掺杂类金刚石纳米点阵列 氧化铝模板 场致发射 

分 类 号：TG174[金属学及工艺—金属表面处理]