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作 者:苏榕冰[1] 陈昱[1] 陈黎娜[1] 陈金凤[1] 曾文荣[1] 庄健[1]
机构地区:[1]中国科学院福建物质结构研究所,福州350002
出 处:《人工晶体学报》2008年第1期104-108,共5页Journal of Synthetic Crystals
摘 要:用改进的熔盐顶部籽晶法生长了KTiOPO4(KTP)晶体并对该晶体进行了抗"灰迹"性能测试。测试表明,在功率密度为120kW/cm2的1064nm激光和10kW/cm2的532nm激光共同照射1000 s后,晶体在633nm处的吸收依然维持在1.05×10-4/cm左右,表明该晶体比普通KTP晶体具有更高的抗"灰迹"性能。透过率测试表明,用本方法生长的KTP晶体在波长短于500nm的区域比普通KTP晶体有更高的透过率。通过实验测定,得出该晶体在室温下1064nm倍频Ⅱ类相位匹配角θ=90°时=24.40°。KTiOPO4 (KTP) crystals with high "gray-track" resistance were grown using a modified TSSG method. After exposed to two strong CW-laser radiation (1064nm, 120kW/cm^2 and 532nm, 10kW/ cm^2) at the same time for 1000s, the absorption of the crystal element at 633nm is still maintained at around 1.05 ×10^-4/cm. Comparative measurements show that these crystals have a higher "gray-track" resistance than regular flux grown KTP crystals and are expected to be suitable for higher power density applications. The transmittance of these crystals is also higher than regular flux grown KTP crystals in the region of wavelength shorter than 500nm. Experiments indicate that the phase matching angle of type Ⅱ SHG at 1064nm for θ= 90° is Φ = 24.40°.
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