ITO薄膜的厚度对其光电性能的影响  

Thickness Dependence of In_2O_3:Sn Film Properties Deposited by Reactive Evaporation

作　　者：李林娜[1,2,3] 薛俊明[1,2,3] 赵亚洲[1,2,3] 李养贤[1,2,3] 耿新华[1,2,3] 赵颖[1,2,3] 

机构地区：[1]南开大学光电子薄膜器件与技术研究所 [2]光电子薄膜器件与技术天津市重点实验室 [3]光电信息技术科学教育部重点实验室,天津300071

出　　处：《人工晶体学报》2008年第1期147-150,共4页Journal of Synthetic Crystals

基　　金：天津市科技发展计划项目(06YFGZGX02100);天津市自然科学基金项目(043604911);国家“973”重点基础研究项目(2006CB202602和2006CB202603)

摘　　要：氧化铟锡(indium-tin oxide,ITO)具有在可见光范围内高度透明的特性和优良的电学特性,通常当作透明电极,被广泛应用于太阳电池和发光元器件上。本研究中用电阻加热反应蒸发的方法制备ITO薄膜,测试了膜的厚度、电阻率、可见光透过率、载流子浓度和迁移率,讨论薄膜的厚度对薄膜光电性能的影响。实验中制备的ITO薄膜,透过率良好,电阻率可达6.37×10-4Ω.cm,载流子浓度和迁移率可分别达到1.91×1020cm-3和66.4cm2v-1s-1。将实验中制备的ITO作为nip太阳能电池透明电极,其短路电流为10.13mA/cm2,开路电压为0.79V,填充因子为0.648,效率可达到5.193%。The indium tin oxide films with different thickness have been prepared on glass substrates by reactive evaporation of In-Sn alloy with an oxygen pressure of 1.4 × 10^-1 Pa and substrate temperature at 160℃. In this research ,the deposition rate is 0. lnm/s. The best ITO films we obtained have electrical resistivity of 6.37×10^-4Ω·cm , carrier concentration of 1.91×10^20 cm^-3 and Hall mobility of 66.4cm^2v^-1s^-1 cm v s . The influence of thickness on structural, optical and electrical properties of the obtained films has been investigated. A-Si solar cells with ITO films as front contact were prepared. After optimization, a cell with open-circuit voltage of 0.79V, short-circuit current density of 10.13mA/cm^2, fill factor of 0.648, and efficiency of 5. 193% was achieved.

关 键 词：ITO薄膜 电阻蒸发法 载流子浓度 霍尔迁移率 

分 类 号：O484[理学—固体物理]