钐掺杂钨酸铅晶体的生长  

Growth of Sm^(3+) Doped Lead Tungstate

作　　者：徐衍岭[1] 王锐[1] 杨同勇[1] 刘维海[1] 王斌举[1] 徐玉恒[1] 

机构地区：[1]哈尔滨工业大学理学院应用化学系,哈尔滨150001

出　　处：《人工晶体学报》2008年第1期174-178,共5页Journal of Synthetic Crystals

基　　金：哈尔滨市攻关项目(No.2005AA5CG059)

摘　　要：为了用提拉法生长出质量优良的衫掺杂钨酸铅晶体,通过理论分析,实践论证,确定了生长晶体的工艺参数。温度梯度采用较成熟工艺,讨论晶体的生长速度和旋转速度。晶体生长速度为2~5mm/h;晶体旋转速度为35~50 r/m in;以45℃/h的速度降至室温,同时保持30 r/min的旋转速度。得到了不同浓度衫掺杂的表观透明,无碎裂淡粉红色的钨酸铅晶体,且目前得到晶体的最大尺寸为25mm×40 mm。In order to get the perfect lead tungstate doped by Sm^3＋ , through theory analyzing and practice conforming, the technical parameters had been taken. Temperature gradient used the traditional mature technology, crystal growth rate and the speed of rotation were discussed. As shown, growth rate was 2 - 5mm/h, rotation rate was 35 -50r/rain, cooling rate was 45℃/h to the room temperature and kept the rotation rate of 30 r/min at the same time. With these parameters, the transparent, break-free and light pink crystals were gained, the largest size of crystal we had got was Φ25 mm ×40 mm.

关 键 词：钨酸铅晶体 晶体生长 工艺参数 钐掺杂 

分 类 号：O78[理学—晶体学]