基于脉冲激光沉积的新型镉离子薄膜传感器  

Novel thin film cadmium ion selective sensor based on pulse laser deposition

作　　者：胡卫军[1] 李毅[1] 邹绍芳[1] 王平[1] Andrey Legin 

机构地区：[1]浙江大学生物传感器国家专业实验室,生物医学工程教育部重点实验室,浙江杭州310027 [2]圣彼得堡大学化学系,圣彼得堡俄罗斯199034

出　　处：《浙江大学学报（工学版）》2008年第2期286-289,320,共5页Journal of Zhejiang University：Engineering Science

基　　金：国家“863”高技术研究发展计划资助项目(2001AA635060);浙江省国际合作重点资助项目(2004C24002)

摘　　要：采用用于镉离子选择电极的硫属玻璃（Cd-Ag-As-I-S）制备敏感材料,结合脉冲激光沉积技术与光寻址电位传感器的特点,在光寻址电位传感器表面上沉积对镉离子敏感的薄膜材料,研制了一种新型镉离子敏感薄膜传感器.该传感器基底为N型单晶硅片,金属接触层为Cr/Au.通过实验得出该传感器的检出下限为1.15×10^-7mol/L,响应时间小于2 min,适用溶液pH范围为4-7,具有测量快速灵活、所需样品少、测量下限低等特点.该传感器对干扰离子具有较好的抑制能力.该传感器采用交流光激发电流信号进行测量,相对于离子选择电极,灵敏度得到了提高.实验结果表明脉冲激光沉积方法是制备薄膜微型传感器的一种新的有效手段.A novel thin film micro sensor sensitive to cadmium （ Ⅱ ） ion was made by depositing the cadmium ion selective chalcogenide glasses （Cd-Ag-As-I-S） materials on the surface of a light-addressable potentiometric sensor （LAPS） using putse taser deposition （PLD） technique. The substrate of the sensor is a single crystal silicon of N type and the metal contact layers are Cr/Au. The detection limit of the thin film sensor was tested to be 1.15 × 10^-7 mol/L, the response time less than 2 min, and the application scope of pH from 4 to 7. The sensor has good inhibition ability to interfering ions. The thin film sensor has the characteristics such as rapid detection, few sample solutions and low detection limit. Contrasted with a ionselective electrode （ISE）, the sensor improves the sensitivity for its response signal is alternating-current excited by an alternating light. The results show that PLD technique is a new and effective method for preparing thin film micro integrating sensors.

关 键 词：镉离子敏感薄膜传感器 光寻址电位传感器 硫属玻璃 脉冲激光沉积 

分 类 号：O657.15[理学—分析化学]