Influence of sputtering parameters on microstructure and mechanical properties of GeSbTe films  

作　　者：付永忠 

机构地区：[1]Micro/Nano Science and Technology Center,Jiangsu University

出　　处：《中国有色金属学会会刊：英文版》2008年第1期167-170,共4页Transactions of Nonferrous Metals Society of China

基　　金：Project(50475124)supported by the National Natural Science Foundation of China;Project(200330)supported by the Foundation for the National Excellent Doctoral Dissertation of China;Project(NCET-04-0515)supported by the New Century Excellent Talents in University,China

摘　　要：GeSb2Te4 films were deposited on Si substrates by RF magnetron sputtering,and the effects of sputtering power on the surface topography and anti-compression properties were studied with atomic force microscope(AFM)and nanoindenter.Meanwhile,the mechanical properties of GeSb2Te4 films with oxygen impurity were also investigated.The results indicate that proper sputtering power is important for obtaining GeSb2Te4 films with high compact structure and low surface roughness,which present good load-support capacity.Although the effect of oxygen impurity on the anti-compression properties of GeSb2Te4 films is not very significant as a whole,certain oxygen dosage can relax the internal stress,thereby the hardness of the films drops slightly.GeSb2Te4 films were deposited on Si substrates by RF magnetron sputtering, and the effects of sputtering power on the surface topography and anti-compression properties were studied with atomic force microscope（AFM） and nanoindenter. Meanwhile, the mechanical properties of GeSb2Te4 films with oxygen impurity were also investigated. The results indicate that proper sputtering power is important for obtaining GeSb2Te4 films with high compact structure and low surface roughness, which present good load-support capacity. Although the effect of oxygen impurity on the anti-compression properties of GeSb2Te4 films is not very significant as a whole, certain oxygen dosage can relax the internal stress, thereby the hardness of the films drops slightly.

关 键 词：GeSbTe薄膜 溅射技术 机械力学 显微结构 

分 类 号：TB383.2[一般工业技术—材料科学与工程]