两种增强可靠性的电荷泵新结构  

Two New Charge Pumps with Improved Reliablity

作　　者：金荣华[1] 刘志[1] 江舟[1] 曾晓洋[1] 

机构地区：[1]复旦大学专用集成电路和系统国家重点实验室,上海201203

出　　处：《复旦学报（自然科学版）》2008年第1期14-20,共7页Journal of Fudan University：Natural Science

摘　　要：从器件可靠性角度出发提出两种升压电荷泵新结构.一种不需用高压工艺但是需要三阱工艺,一种既不需高压工艺也不需三阱工艺,可以用普通工艺实现.仿真结果表明电路性能符合理论分析.The reliability of the voltage-multiplication charge pump circuit is analyzed. Two new structures of the charge pump are proposed. The first one eliminates thenecessity for a high-voltage process but needs using a triple-well process; the second one can be implemented in a standard process. Simulation showed that the circuit performance is in agreement with the theoretical analysis.

关 键 词：集成电路 模拟集成电路 电荷泵 可靠性 三阱工艺 高压工艺 

分 类 号：TN432[电子电信—微电子学与固体电子学]