SnAgCu/Cu界面热循环及时效条件下化合物的生长行为  

Growth of IMC in SnAgCu/Cu Interface During Thermal Aging and Thermal Cycling

作　　者：李凤辉[1] 李晓延[1] 严永长[1] 

机构地区：[1]北京工业大学材料学院,北京100022

出　　处：《失效分析与预防》2008年第1期23-27,共5页Failure Analysis and Prevention

基　　金：国家自然科学基金项目(50475043)资助;北京市自然科学基金项目(2052006;2082003)资助

摘　　要：通过对等温时效与温度循环两种条件下钎料与基板间金属间化合物(IMC)生长的对比,研究了界面IMC生长的规律。采用了两条低温极限不同保温时间和循环周期相同的循环曲线,等温时效温度采用循环高温峰值温度。结果表明,随着循环周期的增加,界面IMC层的厚度增加,且低温极限温度越低时IMC生长越快。与时效条件下界面IMC生长的对比表明,在高温阶段保温时间相同时,时效条件下界面IMC的生长速率快于循环条件。Growth behavior of intermetallic compounds （IMC） at SnAgCu/Cu interfaces under two kinds of thermal cycling and thermal aging condition was investigated. Two thermal cycling curves with the same cycle time and different low temperature limit were adopted, and upper temperature of thermal cycling was adopted as aging temperature. Result show that IMC layer increased with the cycles, and it grew faster under low temperature cycling. Compared with IMC thickness under thermal aging, when the upper temperature stage was same, IMC grew faster under thermal aging than thermal cycling.

关 键 词：热循环 时效 金属间化合物 

分 类 号：TG156[金属学及工艺—热处理]