InSb阳极氧化膜组分和形貌分析  

The Composition and Configuration of Anodic Oxides on InSb Substrate

作　　者：宁玮[1] 罗宏[1] 

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2008年第3期234-237,共4页Laser & Infrared

摘　　要：利用X射线光电子能谱(XPS)分析了不同氧化条件下InSb阳极氧化膜的组成成分以及各种组分纵向分布;用观察在扫描电子显微镜(SEM)不同氧化条件下InSb阳极氧化膜的微观形貌。研究了InSb阳极氧化膜的化学和结构特性及其对自身电学性能的影响。为提高InSb阳极氧化膜制备工艺水平提供了有效参考。The composition of anodic oxides on InSb substrate was explored using X-ray photoelectron spectrometer （XPS） ,all the composition＇s vertical distribution was researched. The configuration of the oxides was observed and the microcosmic pictures of the oxide film was taken using scanning electron microscope（SEM）. The structural and electrical characteristics of the InSb anodic oxides would be analysed on base of data in this article.

关 键 词：阳极氧化 InSb衬底 电流密度 

分 类 号：TN305.5[电子电信—物理电子学] TN362