Mechanism of Reverse Snapback on I-V Characteristics of Power SITHs with Buried Gate Structure  

埋栅型电力静电感应晶闸管的I-V特性反向转折机理(英文)

作　　者：王永顺[1] 李海蓉[2] 吴蓉[1] 李思渊[2] 

机构地区：[1]兰州交通大学电子与信息工程学院,兰州730070 [2]兰州大学物理科学与技术学院微电子研究所,兰州730000

出　　处：《Journal of Semiconductors》2008年第3期461-466,共6页半导体学报（英文版）

摘　　要：The reverse snapback phenomena （RSP） on I-V characteristics of static induction thyristors （SITH） are physically researched. The I-V curves of the power SITH exhibit reverse snapback phenomena, and even turn to the conducting-state,when the anode voltage in the forward blocking-state is increased to a critical value. The RSP I-V characteristics of the power SITH are analyzed in terms of operating mechanism, double carrier injection effect, space charge effect, electron-hole plasma in the channel, and the variation in carrier lifetime. The reverse snapback mechanism is theoretically pro- posed and the mathematical expressions to calculate the voltage and current values at the snapback point are presented. The computing results are compared with the experiment values.研究了静电感应晶闸管的反向转折特性.当工作在正向阻断态的阳极电压增大到某一临界值时,静电感应晶闸管的I-V曲线呈现出反向转折特性,甚至转向导通态.在综合考虑了工作机理、双注入效应、空间电荷效应、沟道中的电子-空穴等离子体和载流子寿命变化的基础上分析了静电感应晶闸管的反向转折特性.首次给出了反向转折机理的理论解释,并给出了估算转折电压和电流的数学表达式,在常用工艺参数范围内,计算结果和实验测量值基本一致.

关 键 词：power static induction thyristor reverse snapback electron-hole plasma LIFETIME injection level 

分 类 号：TN34[电子电信—物理电子学]