真空蒸镀ITO薄膜退火特性分析  

Analysis on the Annealing Properties of ITO Thin Film Prepared by Vacuous Evaporation Method

作　　者：许晶[1] 桂太龙[1] 梁丽超[1] 王玥[1] 

机构地区：[1]哈尔滨理工大学应用科学学院,黑龙江哈尔滨150080

出　　处：《哈尔滨理工大学学报》2008年第1期93-95,共3页Journal of Harbin University of Science and Technology

基　　金：黑龙江省自然科技基金(E2004-05);黑龙江省教育厅科技项目(11511091)

摘　　要：采用真空蒸发镀膜工艺制备了ITO透明导电薄膜,以四探针表面电阻仪测量得薄膜方块电阻为400Ω,用组合式多功能光栅光谱仪测得透光率为80%,利用扫描电镜测得膜厚为103 nm.用XRD分析了薄膜的物相,并用原子力显微镜分析了薄膜的表面形貌及粗糙度.对薄膜进行退火处理,结果表明,随着热处理温度的升高,晶化趋于完整,组织结构逐渐均匀致密,晶粒有所长大.随退火时间的增加,透光率增加,但方块电阻先减小后增加.Hyaloid ITO conducting thin film was prepared by vacuous evaporation plating process. A Sheet resistance of 400 Ω/was obtained by four point resitivity test system. And penetration coefficient was 80% which was measured by grating spectrograph. The film thickness was 103 nm which was measured by SEM. XRD and atomic force microscope were used to analyze the phase, fine texture and roughness. The thin film was annealed. The re- sult showed that crystallization tended to be more complete, texture tended to be more compact and the crystal grain growth was found. with the increasing The sheet resistance firstly decreased and then increased but the penetration coefficient increased of the annealing time.

关 键 词：铟锡氧化物 真空蒸发镀膜 方阻 透光率 

分 类 号：TN321.5[电子电信—物理电子学]