压电材料V型切口端部电弹性场研究  

ON THE ELECTRO-MECHANICAL FIELDS NEAR V NOTCHES IN PIEZOELECTRIC CERAMICS

作　　者：平学成[1] 陈梦成[2] 谢惠民[3] 刘战伟[3] 

机构地区：[1]华东交通大学机电学院,南昌330013 [2]华东交通大学土木建筑学院,南昌330013 [3]清华大学航空航天学院,北京100084

出　　处：《固体力学学报》2008年第1期78-84,共7页Chinese Journal of Solid Mechanics

基　　金：国家自然科学基金项目(10362002,10662004);江西省自然科学基金项目(2007GZW0862);江西省教育厅科学研究项目(2007-198)资助

摘　　要：通过广义Hellinger-Reissner变分原理导出了一个环绕V型切口端部邻域的超级奇异单元,并将其与全域压电杂交元结合,建立了一种新型数值求解压电材料切口端部奇异电弹性场的杂交元模型.为了验证该模型的有效性,以含V型切口的三点弯曲试件为例,首先用杂交元数值模型计算了切口端部的广义应力强度因子及其延长向上的应变分布,然后与用云纹干涉实验法测定的相应实验结果相比较,比较结果表明:两者吻合良好.A kind of super singular element suitable for analysis on the adjacent domain of a piezoelectric V-notch is established based on the generalized Hellinger-Reissner variational principle. Through incorporating this super singular element with the standard four-node quadrilateral piezoelectric element, a new hybrid element model is established to compute the electro-mechanical quantities near the tips of piezoelectric V-notches. To verify present finite element model, V-notched TPB specimens with different notch angles are calculated with this new technique. It is observed that all the numerical results are coincident very well with the experiment results measured by moiré interferometry technique.

关 键 词：压电材料 切口 奇异电弹性场 杂交元法 云纹干涉实验 

分 类 号：O343[理学—固体力学]