利用Alq3掺杂在NPB中制备白光OLED  

The white OLED were produced using the doped Alq_3 in NPB hole transport layer

作　　者：王静[1] 姜文龙[2] 王广德[2] 王立忠[2] 汪津[2] 丁桂英[2] 韩强[2] 刘式墉[3] 

机构地区：[1]哈尔滨工业大学(威海)信息科学与工程学院,山东威海264209 [2]吉林师范大学信息技术学院,吉林四平136000 [3]吉林大学集成光电子国家重点联合实验室,吉林长春130012

出　　处：《光电子．激光》2008年第3期293-295,共3页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(6020700360376028);国家重点基础研究资助项目(2003CB314703);吉林省科技发展计划资助项目(20050523);吉林省教育厅科研计划资助项目([2003]第25号,[2004]第54号);四平科技局计划资助项目(20030017)

摘　　要：利用Alq3掺杂在NPB中作为空穴传输层，并以DPVBi和rubrene作为发光层，制备了多层的白光有机发光器件（OLED）。与在同一条件下的对比器件相比，掺杂的器件在相同电压下亮度和效率都有所增加。掺杂的器件的最大亮度在17V时达到了19921cd／m^2，最大效率在7V时达到了3．69cd／A，色坐标（CIE）在5～16V内几乎没有改变，我们认为，掺杂器件性能的提高是由于掺杂剂Alq3分子对空穴有散射作用，阻挡了部分空穴的传输，降低了空穴的迁移率；而Alq3又是很好的电子传输材料，Alq3掺杂提高了空穴和电子在发光层中的注入平衡，有利于激子的形成，从而提高了器件的性能。We have designed a multilayer white emission device by using the doped Alq3 in hole transmission layers of NPB, DPVBi and rubrene ware emitting layer, respectively. Compared with the control device under the same condition, both brightness and efficiency of doped device under identical voltage are better. The maximum brightness is 19 921 cd/m^2 at 17 V. The maximum electroluminescence efficiency is 3.69 cd/A at 7 V. The commission international De L＇Eclariage（CIE）co- ordination of the devices is very stable at 5 V to 16 V. The reason is that the Alq3 molecule has scattering function to the hole, which may stop the transmission of some holes, and reduce the mobility of hole;and Alq3 is a good material of electron and transmission,this adulterate can improve the transfused balance of hole and electronic in the luminous layer, which is beneficial to the formation of exciton and can enhance the capability of device.

关 键 词：掺杂 有机电致发光器件(OLED) 白光 多层结构 

分 类 号：TN383.1[电子电信—物理电子学]