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作 者:李灼[1] 王敬民[1] 刘伟超[1] 蒋成保[1]
机构地区:[1]北京航空航天大学材料科学与工程学院,北京100083
出 处:《金属学报》2008年第3期302-306,共5页Acta Metallurgica Sinica
基 金:国家自然科学基金项目50531010;教育部新世纪优秀人才计划项目04-0165;长江学者创新团队计划项目IRT0512资助~~
摘 要:采用光子加热悬浮区熔法制备出直径7 mm、长60 mm的Ni_(50)Mn_(28.5)Ga_(21.5)单晶.分别切割成8.1 mm×4.3 mm×4.4 mm和直径7mm,长38.9 mm的两块单晶体,利用10 T强磁场进行变体处理获得近似单变体,并获得了5.2%的大磁致应变.磁致应变压力效应的测试表明,随压应力增大,孪晶再取向的临界磁场强度增大,磁致应变降低.Ni50Mn28.5Ga21.5 single crystal with size of φ7 mm×60 mm was prepared by optical floating zone-melting method, from which two experimental single crystal samples with the sizes of 8.1 mm×4.3 mm×4.4 mm and φ 7 mm×38.9 mm were cut by spark. A 10 T high pulsed magnetic field was used to treat variants, and a near single variant was obtained, 5.2% giant magnetostrain was achieved in the treated single crystal. The effect of the pressure on the magnetostrain was investigated, which showed that with increasing the compression stress, the critical magnetic field for the magnetostrain jump increased and the magnetostrain was decreased.
关 键 词:铁磁形状记忆合金 NiMnGa单晶 磁致应变 压力效应
分 类 号:TG139.6[一般工业技术—材料科学与工程]
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