先驱体Fe膜结晶程度对FeS2薄膜组织和性能的影响  

Influences of crystallizing status of precursor Fe films on microstructure and properties of FeS_2 films

作　　者：陈旭波[1] 刘艳辉[1] 汪洋[2] 孟亮 

机构地区：[1]浙江大学材料与化学工程学院,浙江杭州310027 [2]浙江理工大学理学院,浙江杭州310018

出　　处：《浙江大学学报（工学版）》2008年第3期489-492,共4页Journal of Zhejiang University：Engineering Science

基　　金：浙江省自然科学基金资助项目(Y405016);教育部博士学科点研究基金资助项目(20060335104)

摘　　要：利用不同温度基底溅射沉积Fe膜并硫化合成FeS2薄膜的方法，研究了先驱体Fe膜结晶程度对FeS2薄膜组织结构和电学性能的影响．结果表明，较高的基底温度能够产生较大尺寸的Fe膜晶粒，400℃硫化反应可使不同结晶程度的Fe转变为晶粒细小的FeS2．随先驱体Fe膜基底温度升高，合成后的Fe＆膜体几何连续程度提高，载流子浓度下降及Hall迁移率上升．制备先驱Fe膜基底温度为300-400℃时的FeS2薄膜电阻率出现极大值．Fe膜基底温度变化改变了先驱体结晶程度，导致了FeS2薄膜中晶体缺陷行为及相变应力作用程度的变化，进而导致了FeS2薄膜电学性能的变化．The precursor Fe films deposited at different substrate temperature were annealed at 400℃ for 20 h in sulfur atmosphere to prepare FeS2 thin films. The effects of crystallizing status of the precursor Fe films on the microstructure and electrical properties of FeS2 films were investigated. Higher substrate tem- perature results in larger crystallite scale of the precursor Fe films. Sulfuration reaction at 400℃induces the change of precursor Fe with various crystallizing levels into fine FeS2 crystallites. With the increase of substrate temperature in depositing the precursor Fe films, the geometrical completeness of the film bulk increases, the carrier concentration decreases and the Hall mobility increases for the FeS2 films formed from the precursor Fe films. The electrical resistivity shows a maximum when the FeS2 films are obtained from the precursor Fe films deposited at substrate temperatures in 300-400℃. The mechanism that different substrate temperature changes the crystallizing status of the precursor Fe films and results finally in various behaviors of crystal lattice defects and levels of phase transformation stress in the FeS2 films should be responsible for the change of electrical properties with substrate temperature.

关 键 词：FeS2膜 先驱体 组织结构 电学性能 

分 类 号：TN304.05[电子电信—物理电子学]