Enhanced adhesion of Cu-W thin films by ion beam assisting bombardment implanting  

作　　者：周灵平 汪明朴 王瑞 李周 朱家俊 彭坤 李德意 李绍禄 

机构地区：[1]School of Materials Science and Engineering,Central South University [2]College of Materials Science and Engineering,Hunan University

出　　处：《中国有色金属学会会刊：英文版》2008年第2期372-377,共6页Transactions of Nonferrous Metals Society of China

基　　金：Project(05JJ3005)supported by the Natural Science Foundation of Hunan Province,China

摘　　要：Cu-W thin film with high W content was deposited by dual-target DC-magnetron co-sputtering technology.Effects of the substrates surface treating technique on the adhesive strength of Cu-W thin films were studied.It is found that the technique of ion beam assisting bombardment implanting of W particles can remarkably improve the adhesive property of Cu-W thin films. Indentation and scratching test show that,the critical load is doubled over than the sample only sputter-cleaned by ion beam.The enhancing mechanism of ion beam assisting bombardment implanting of Cu-W thin films was analyzed.With the help of mid-energy Ar+ion beam,W atoms can diffuse into the Fe-substrate surface layer;Fe atoms in the substrate surface layer and W atoms interlace with one another;and microcosmic mechanical meshing and diffusing combination on atom-scale among the Fe and W atoms through the film/substrate interface can be formed.The wettability and thermal expansion properties of the W atoms diffusion zone containing plentiful W atoms are close to those of pure W or W-based Cu-W film.Cu-W thin film with high W content was deposited by dual-target DC-magnetron co-sputtering technology. Effects of the substrates surface treating technique on the adhesive strength of Cu-W thin films were studied. It is found that the technique of ion beam assisting bombardment implanting of W particles can remarkably improve the adhesive property of Cu-W thin films. Indentation and scratching test show that, the critical load is doubled over than the sample only sputter-cleaned by ion beam. The enhancing mechanism of ion beam assisting bombardment implanting of Cu-W thin films was analyzed. With the help of mid-energy Ar^＋ ion beam, W atoms can diffuse into the Fe-substrate surface layer; Fe atoms in the substrate surface layer and W atoms interlace with one another; and microcosmic mechanical meshing and diffusing combination on atom-scale among the Fe and W atoms through the film/substrate interface can be formed. The wettability and thermal expansion properties of the W atoms diffusion zone containing plentiful W atoms are close to those of pure W or W-based Cu-W film.

关 键 词：铜 薄膜 离子 磁电管 

分 类 号：TB383.2[一般工业技术—材料科学与工程]