高效率808nm激光器的数值模拟研究  

Numerical Study for High Efficiency 808 nm Laser Diode

作　　者：赵懿昊[1] 陈宏泰[2] 陈国鹰[1] 杨红伟[2] 赵润[2] 彭海涛[1] 

机构地区：[1]河北工业大学信息工程学院,天津300401 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2008年第4期311-315,共5页Semiconductor Technology

基　　金：国家部委基金资助项目

摘　　要：分析了提高激光器电光转换效率的几种途径,认为降低激光器工作电压、串联电阻和阈值电流可以提高激光器转换效率。分别对Ga0.5InP和AlxGaAs对称波导激光器进行了模拟,结果表明,AlxGaAs材料体系(AlxGaAs/AlxGaAs/InGaAsP)激光器的各种参数均优于Ga0.5InP材料体系((AlxGa)0.5InP/Ga0.5InP/InGaAsP)激光器,并在模拟的基础上制备出了相应的激光器。依据模拟结果和器件结果分析得出,增大波导层掺杂浓度可以降低激光器的工作电压和串联电阻;改变波导层组分为渐变值时可降低激光器阈值电流,从而增大激光器转换效率。By analyzing the conditions which can increase the power conversion efficiency （PCE） of diode, it is found that decreasing the work voltage, serial resistance and the threshold current can increase the PCE. The simulations on Ga0.5 InP and AlxGaAs symmetric waveguide laser diodes were carded out respectively. The results show that the parameters of Alx GaAs material system （InGaAsP quantum well sandwiched by Alx GaAs waveguide and cladding） are better than that of Ga0.5InP material system （InGaAsP quantum well with Ga0.5 InP waveguide and （AlxGa）0.5 InP cladding）. Based on the conditions the corresponding diodes are fabricated, the results of the simulation and the fabrication of the diodes show that increasing the doping density can reduce the work voltage and serial resistance; using graded material in the waveguide can reduce the threshold current, thus the PCE of the diodes is increased.

关 键 词：激光器 材料体系 电光转换效率 串联电阻 阈值电流 

分 类 号：TN248.4[电子电信—物理电子学]