大功率半导体激光器加速寿命测试方法  

Accelerated Life-Time Test of High-Power Laser Diode

作　　者：荣宝辉[1] 王晓燕[2] 安振峰[2] 仲琳[1] 陈国鹰[1] 张存善[1] 

机构地区：[1]河北工业大学信息工程学院,天津300130 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2008年第4期360-362,共3页Semiconductor Technology

基　　金：国家部委支持项目

摘　　要：大功率半导体激光器在高可靠性光学系统的应用中,寿命值预测十分关键。采用808nm波长的无Al大功率半导体单管激光器进行了40、80℃的恒定温度的加速老化试验。应用Arrhenius和对数正态分布的理论对试验结果进行分析,计算出激光器长期退化的激活能为0.52eV,推导得到激光器室温下工作的平均寿命为15000h。并对试验后的器件进行失效分析,找出失效原因。The life-time prediction of high power laser diode （LD） is a crucial factor in the application of highly reliable optical system. The life-time of 808nm Al-free high-power LD was investigated by accelerated aging test at 40 and 80℃, constant current 1.2 A. The test results were analyzed, the calculated long-term degradation activation energy was 0.52 eV based on the Arrhenius model and lognormal distribution model, the average lifetime at room temperature MTTF = 15 000 h was deduced. The failure analysis on experimental devices was taken, some degradation modes were found out.

关 键 词：半导体激光器 加速老化 可靠性 寿命试验 

分 类 号：TN248.4[电子电信—物理电子学]