脉冲激光沉积PMN-PT薄膜及其性能研究  

Characterization of PMN-PT Thin Film Formed by Femtosecond Pulsed Laser Deposition

作　　者：童杏林[1] 姜德生[1] 刘恋[1] 刘忠明[1] 

机构地区：[1]武汉理工大学光纤传感技术与信息处理教育部重点实验室,武汉430070

出　　处：《光子学报》2008年第3期494-497,共4页Acta Photonica Sinica

基　　金：国家自然科学基金重点基金(60537050)资助

摘　　要：以较低温度烧结获得的PMN-PT块材料为靶,采用脉冲激光沉积方法在石英衬底上制备了PMN-PT薄膜,研究了后续退火处理对PMN-PT薄膜的结构及光学特性的影响.结果显示,采用脉冲激光沉积可获得质量较好的钙钛矿结构的PMN-PT薄膜,优化的后续退火温度大约在550℃～750℃之间.The target of PMN-PT is sintered under low temperature. The PMN PT thin films are grown on quartz substrates using pulsed laser deposition. The influence of the annealed temperature on the structural and optical characterizations for the PMN PT thin films is studied. The results show that the PMN-PT thin films of perovskite structure have been formed, and the quality of PMN-PT thin films can be improved in the annealed temperature range of 550-750℃.

关 键 词：PMN—PT薄膜 脉冲激光沉积 结构 光学特性 

分 类 号：TN304.2[电子电信—物理电子学]