电压激励神经信号重建微电子系统  

Neural Signal Rebuilding Microelectronics System with Voltage Function Electrical Stimulation Signal Generator

作　　者：毛晓轶[1] 李文渊[1] 王志功[1] 

机构地区：[1]东南大学射频与光电集成电路研究所,南京210096

出　　处：《电子器件》2008年第2期484-487,共4页Chinese Journal of Electron Devices

基　　金：国家自然科学基金重大研究计划重点项目支持(90377013)

摘　　要：采用0.6μm CMOS工艺设计并仿真了电压激励的神经信号重建微电子系统。系统适用于卡肤电极(cuff elec-trode),由检测电路和功能电激励(FES)电路组成。检测电路采集受损神经上端信号,以控制功能电激励电路,产生FES信号来激励受损神经下端。电路工作于±2.5V。系统增益40～80dB可调,3dB带宽大于10kHz,功耗8.2mW。芯片尺寸为1.42mm×1.34mm。A neural signal rebuilding microelectronics system with voltage function electrical stimulation （FES） signal generator in 0.6 μm CMOS process is presented. The system applies to cuff electrode, consists of a signal detecting stage and a voltage function electrical stimulation stage. The signal detecting stage detects neural signals from injured nerve, and voltage function electrical stimulation stage generates a FES signal to stimulate another end of injured nerve. The supply voltage of the circuit is ±2. 5 V. The gain of the system can be variable from 40 dB to 80 dB, 3 dB bandwidth is more than 10 kHz, and the power consumption is 8. 2 roW. The chip area is 1.42 mm×1.34 mm.

关 键 词：神经信号 中枢神经系统 CMOS 卡肤电路 

分 类 号：TN722[电子电信—电路与系统] Q424[生物学—神经生物学]