BiCMOS工艺的高线性度下变频混频器设计  

Highly Linear Down-Conversion Mixer in BiCMOS Technology

作　　者：李雪刚[1] 吴建辉[1] 

机构地区：[1]东南大学集成电路学院,南京210096

出　　处：《电子器件》2008年第2期500-502,共3页Chinese Journal of Electron Devices

摘　　要：利用BiCMOS工艺设计了一种高线性度下变频混频器。在此变频混频器的设计中结合了双极型工艺在射频段的高性能以及MOS工艺的高线性度,并利用其对传统的吉尔伯特单元进行了优化。基于JAZZ0.35μm标准BiCMOS SBC35工艺设计参数对混频器进行了设计和仿真,仿真结果表明该混频器获得了良好的性能指标,转换增益为9.3dB,输入3阶互调点达到了16dBm,在5V单电源下消耗1.9mA的电流。This paper designs a down-conversion mixer with high linearity in BiCMOS technology. The design of the down-conversion mixer merges both the high performance of the bipolar in radio frequency, together with the high linearity of the MOSFET, and makes some improvement on traditional Gilbert Cell. Using the JAZZ 0. 35 μm standard BiCMOS SBC35 design parameter, the simulation results of the downconversion mixer indicate good performance with 9.3 dB conversion gain, and 16dBm IIP3. The mixer consumes 1.9 mA current in single 5V supply.

关 键 词：射频集成电路设计 BICMOS 吉尔伯特单元 线性度 

分 类 号：TN773[电子电信—电路与系统]