一种基于FAT文件系统的NAND Flash坏块处理方法  

Method of NAND Flash Memory Bad Block Management Based on FAT File System

作　　者：罗晓[1] 刘昊[1] 

机构地区：[1]东南大学国家专用集成电路系统工程中心,南京210096

出　　处：《电子器件》2008年第2期716-719,共4页Chinese Journal of Electron Devices

摘　　要：NAND Flash具有高存储密度和高存储速率的特点,在嵌入式系统领域得到了广泛应用。但其固有的擦除机制和存在有坏块这一致命弱点,成为其在应用中的主要障碍。本文提出了一种应用于FAT文件系统上的坏块处理方法,使用Flash上其他的空闲块或者空闲空间来代替坏块,并将坏块在FAT表中作出标记以后不作使用。这种方法彻底屏蔽了坏块对上层应用的影响,并对存储介质没有造成任何不良影响,从而很好地克服了上述障碍。工程项目中的应用证明了其较高的可靠性。Nand flash becomes widely used in embedded system because of high memory density and high memory speed. But it still have many obstruct in application, such as the mechanism of erasure and the weakness of bad block. A new method of dealing with the bad block is introduced to get over the hindrance. It replaces the bad block with other free block or free space on the flash. Bad blocks marked in the file allocation table are never used again. This method thoroughly eliminates the influence on upper applications caused by bad block and without any bad effect on memory medium. It has been carried out in a project with high stability.

关 键 词：神经信号 中枢神经系统 CMOS 卡肤电极 

分 类 号：TP333.3[自动化与计算机技术—计算机系统结构]