硅基光电子学研究进展与趋势  

Advances and Tendency of Si Based Optoelectronics

作　　者：余金中[1] 

机构地区：[1]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083

出　　处：《世界科技研究与发展》2007年第5期50-56,共7页World Sci-Tech R&D

基　　金：科技部"973"项目(No.2006CB302803和G2000-03066);"863"项目(No.2202AA312060);国家自然科学基金项目(No.NSFC-60537010;60576001;69896260;60336010)资助项目

摘　　要：近年来硅基光电子材料和器件受到高度的重视。利用外延生长和键合技术成功研制出硅基应变赝衬底、GexSi1-x/Si量子阱、高密度锗量子点、硅基InGaAsP/Si异质结,这些进展为硅基光电子器件提供了坚实的材料基础。同CMOS工艺相结合,实现了硅量子点1.17μm的受激发射,研制出硅基Raman激光器、1.55μm混合型激光器、高灵敏度的Si/Ge探测器、谐振腔增强型的SiGe光电二极管、调制频率30GHz的SOICMOS光学调制器和16×16的SOI光开关阵列等。硅光电子学将在光通信、光计算等领域获得重要应用。本文综述了国内外硅基光电子材料和器件的进展、我们的研究结果和硅基光电子学的发展趋势。Si based optoelectronic materials and devices have received much more attention in recent years. Strained Si based virtual substrates, Ge,Si1-x/Si quantum wells, Ge quantum dots with high density, Si based InGaAsP/Si heterostructures and etc. were successfully made by epitaxial growth and bonding technology. These materials support a solid foundation for Si based optoelectronic devices. Combining with CMOS technology, 1.17 μm stimulated emission from Si quantum dots, Si based Raman lasers, 1.55 μm hybrid Si based lasers, Si/Ge photodetectors with high sensitivity, RCE （ Resonant Cavity Enhanced ） SiGe photodetectors, 30 GHz SOI CMOS optical modulators, 16×16 SOI optical switch matrix and etc. were successively designed and made. Si based optoelectronics will play an important role in many appications such as optical communication, optical interconnection, optical computing and so on. Advances and tendency of Si based optoelectronic materials and devices, including our research results, are reviewed in the paper.

关 键 词：硅基光电子 量子结构 激光器 探测器 光波导 光开关阵列 

分 类 号：TN491[电子电信—微电子学与固体电子学]