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作 者:侯玉敏[1,2] 冉启泽[1,2] 唐宁 杨伏明 金铎[1,2]
机构地区:[1]中国科学院低温中心极低温物理实验室 [2]中国科学院物理所磁学开放实验室
出 处:《低温物理学报》1997年第4期311-316,共6页Low Temperature Physical Letters
基 金:国家自然科学基金
摘 要:测量了CeNiSn的一系列磁物性,发现在4.5K下,CeNiSn的磁化曲线在3Tesla处有拐点,并且发现4Tesla磁场可以压抑400Gass磁场下测量的磁化率随温度变化曲线在10K附近的峰,但磁阻测量表明4Tesla磁场并没有改变CeNiSn的近藤绝缘体性质.说明磁化率曲线在10K附近的峰的形成与近藤绝缘体的形成无本质联系,磁场对能隙的影响中,Ze-man劈裂的作用并不强,而主要是通过破坏形成准粒子的局域f电子与c电子相互作用而达到压抑能隙的.From the measurements of magnetic properties of CeNiSn compound, it has been found that a turning point of magnetization curve appears at 3Tesla at 4.5K, and that 4Tesla magnetic field can hold back the peak at 10K of magnetic susceptibility vs. temperature in 0.04T magnetic field. However, the measurements of magnetoresistance indicate that 4T magnetic fields doesn′t effect its semiconductivity. Therefore, the peak at 10K of magnetic susceptibility vs. temperature has no relation to the physical interaction responsible for the Kondo insulator. In addition, Zeeman effect doesn′t play an important role in reducing the energy gap vs. magnetic fields, which is reduced by suppressing the Kondo like interactions between local f electrons and c electrons by which the quasiparticles form.
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