CdS_yTe_(1-y)多晶薄膜的制备及光谱表征  

Preparation and Spectral Characterization of CdS_yTe_(1-y) Thin Films

作　　者：李卫[1] 冯良桓[1] 武莉莉[1] 张静全[1] 黎兵[1] 雷智[1] 蔡亚平[1] 郑家贵[1] 蔡伟[1] 张冬敏[1] 

机构地区：[1]四川大学材料科学与工程学院,四川成都610064

出　　处：《光谱学与光谱分析》2008年第3期499-502,共4页Spectroscopy and Spectral Analysis

基　　金：国家高技术研究与发展计划项目(2003AA513010);国家自然科学基金项目(60506004);四川省科技攻关项目(05GG021-003-3);四川省科技支撑计划(2008GZ0027)资助

摘　　要：采用真空共蒸发法制备了CdSyTe1-y(0≤y≤1)多晶薄膜,并用X射线衍射谱(XRD)、能量色散谱(EDS)研究了CdSyTe1-y多晶薄膜的结构、组分。实验结果表明:石英振荡法监控的组分与EDS谱结果较为一致;当y<0·3时,CdSyTe1-y多晶薄膜为立方结构,当y≥0·3时,CdSyTe1-y多晶薄膜为六方结构。采用XRD线形分析法可计算出CdSyTe1-y多晶薄膜晶粒大小约20～50nm。最后,用紫外-可见-近红外谱(UV-Vis-NIR),测得300～2500nmCdSyTe1-y多晶薄膜的透过率曲线,并结合一阶Sellmeier模型的折射率色散关系,表征了CdSyTe1-y多晶薄膜的光学性质,获得了CdS0·22Te0·78多晶薄膜的光学厚度d～535nm,光能隙Eg～1·41eV,以及吸收系数α(λ)、折射率n(λ)等光学量。结果也表明,采用真空共蒸发法可以制备需要组分的CdSyTe1-y多晶薄膜,对CdSyTe1-y多晶薄膜光学性质的表征方法可推广到其他的半导体薄膜材料。CdSyTe1-y（0≤y≤1） polycrystalline thin films were prepared on glass substrates by co-evaporation of powders of CdTe and CdS.For the characterization of the structure and composition of the CdSyTe1-y thin films the X-ray diffraction（XRD） and energy-dispersive spectroscopy（EDS） were used.The results indicate that the values of sulfur content y detected and controlled by the quartz wafer detector show good agreement with the EDS results.The films were found to be cubic for x〈0.3,and hexagonal for x≥0.3.The 20-50 nm of grain sizes for CdSyTe1-y thin films were calculated using a method of XRD analysis.Finally,the optical properties of CdSyTe1-y thin films were characterized by UV-Vis-NIR spectroscopy alone.According to a method from Swanepoel,together with the first-order Sellmeier model,the thickness,of d-535 nm,energy gap of Eg-1.41 eV,absorption coefficient,α（λ） and refractive index,n（λ） of CdS0.22Te0.78 thin films were determined from the transmittance at normal incidence of light in the wavelength range 300-2 500 nm.The results also indicate that the CdSyTe1-y thin films with any composition（0≤y≤1） can be prepared by co-evaporation,and the method to characterize the optical properties of CdSyTe1-y thin films can be implemented for other semiconductor thin films.

关 键 词：CdSyTe1-y薄膜 共蒸发法 光谱表征 

分 类 号：O657.3[理学—分析化学]