射频磁控溅射制备ZrN薄膜及其表征  

Preparation and Characterization of ZrN Thin Film Deposited by Radio Frequency Reactive Magnetron Sputtering

作　　者：隋瑛锐[1] 柏昕昱[2] 刘波[2] 姚斌[2] 

机构地区：[1]吉林师范大学物理学院,吉林四平136000 [2]吉林大学物理学院,吉林长春130021

出　　处：《吉林师范大学学报（自然科学版）》2008年第1期18-19,33,共3页Journal of Jilin Normal University:Natural Science Edition

基　　金：国家自然科学基金(50472003)

摘　　要：本文利用射频磁控溅射在N2和Ar混合气氛环境下,在玻璃衬底上沉积ZrN薄膜.采用X射线衍射(XRD)、X射线散射能谱(EDX)和扫描电子显微镜(SEM)技术对薄膜微观结构、成分及形貌进行分析.结果表明,制备的ZrN薄膜是化学计量比接近于1的面心NaCl结构.从薄膜的表面形貌图可知,薄膜表面平整,缺陷很少,晶粒排列非常致密,且空位及表面缺陷很少.Zirconium nitride films are deposited on glass substrates by radio frequency reactive magnetron sputtering with N2 and Ar mixed gas. Crystalline structure, composition and surface morphology of the films were characterized with X-ray diffraction（XRD）,Scanning Electron Microscopy（SEM） and Energy Dispersive X-Ray Fluoresence Spectrometer （EDX）. The results indicate that the N/Zr atomic ratio of film reaches 1 and the film shows fcc NaCI structure. It can be seen from surface morphology of the films that surface of film is smooth and compact.

关 键 词：射频磁控溅射 ZrN薄膜 X射线衍射 

分 类 号：TG174.444[金属学及工艺—金属表面处理]