Continuous-Wave Operation of GaN Based Multi-Quantum-Well Laser Diode at Room Temperature  

作　　者：张立群 张书明 杨辉 曹青 季莲 朱建军 刘宗顺 赵德刚 江德生 段俐宏 王海 史永生 刘素英 陈良惠 梁骏吾 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science PO BOX 912, Beijing 100083 [2]Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 [3]Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, PO BOX 912,Beijing 100083

出　　处：《Chinese Physics Letters》2008年第4期1281-1283,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 60506001, 60476021 and 60576003, and the National Basic Research Programme of China under Grant No 2007CB936700.

摘　　要：Room-temperature operation of cw GaN based multi-quantum-well laser diodes （LDs） is demonstrated. The LD structure is grown on a sapphire （0001） substrate by metalorganic chemical vapour deposition. A 2.5μm × 800μm ridge waveguide structure is fabricated. The electrical and optical characteristics of the laser diode under direct current injection at room temperature are investigated. The threshold current and voltage of the LD under cw operation are 110mA and 10.5V, respectively. Thermal induced series resistance decrease and emission wavelength red-shift are observed as the injection current is increased. The full width at half maximum for the parallel and perpendicular far field pattern （FFP） are 12° and 32°, respectively.Room-temperature operation of cw GaN based multi-quantum-well laser diodes （LDs） is demonstrated. The LD structure is grown on a sapphire （0001） substrate by metalorganic chemical vapour deposition. A 2.5μm × 800μm ridge waveguide structure is fabricated. The electrical and optical characteristics of the laser diode under direct current injection at room temperature are investigated. The threshold current and voltage of the LD under cw operation are 110mA and 10.5V, respectively. Thermal induced series resistance decrease and emission wavelength red-shift are observed as the injection current is increased. The full width at half maximum for the parallel and perpendicular far field pattern （FFP） are 12° and 32°, respectively.

关 键 词：supernova explosion proto-neutron star shock wave 

分 类 号：TN31[电子电信—物理电子学]