A Novel Kind of Transverse Micro-Stack High-Power Diode Bars  

作　　者：张蕾 崔碧峰 李建军 郭伟玲 王智群 沈光地 

机构地区：[1]Opto-Electronic Technology Laboratory, Beijing University of Technology, Beijing 100022 [2]Beijing Institute of Tracking and Telecommunication Technology, Beijing 100094

出　　处：《Chinese Physics Letters》2008年第4期1284-1286,共3页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Programme of China under Grant No 2006CB604902, the National Natural Science Foundation of China under Grant No 60506012.

摘　　要：Novel transverse micro-stack semiconductor laser bars are put forward to improve the output optical power of semiconductor laser bars at low injection current. More importantly, the novel laser bars have a coupled large optical cavity, which can overcome the problem of catastrophic optical damage and improve light beam quality due to the coherently coupled emitting along the transverse direction. The micro-stack tunnel regeneration tri-active region laser structure was grown by metal organic chemical vapour deposition. For a weakly coupled uncoated device, the optical power exceeds 60 W under 50 A driving current and the slope efficiency reaches 1.55 W/A. Further experiments show that the perpendicular divergence of 23° is achieved from transverse strongly coupled devices.Novel transverse micro-stack semiconductor laser bars are put forward to improve the output optical power of semiconductor laser bars at low injection current. More importantly, the novel laser bars have a coupled large optical cavity, which can overcome the problem of catastrophic optical damage and improve light beam quality due to the coherently coupled emitting along the transverse direction. The micro-stack tunnel regeneration tri-active region laser structure was grown by metal organic chemical vapour deposition. For a weakly coupled uncoated device, the optical power exceeds 60 W under 50 A driving current and the slope efficiency reaches 1.55 W/A. Further experiments show that the perpendicular divergence of 23° is achieved from transverse strongly coupled devices.

关 键 词：SEMICONDUCTOR-LASERS 

分 类 号：TN31[电子电信—物理电子学]