腐蚀法制备绒面ZnO透明导电薄膜  

Textured ZnO Transparent Conductive Thin Film Prepared by Chemical Etching

作　　者：刘佳宇[1] 朱开宇[1] 王文辕[1] 

机构地区：[1]河北理工大学信息学院,河北唐山063000

出　　处：《微纳电子技术》2008年第4期205-208,共4页Micronanoelectronic Technology

基　　金：国家"973"重大基础研究项目资助(G2000028202;2000028203)

摘　　要：利用中频脉冲磁控溅射系统制备高透过率、高电导率的平面ZnO薄膜。对平面ZnO薄膜进行短时间弱酸腐蚀,可以获得绒面效果的ZnO透明导电薄膜。分析了工作气压和衬底温度对薄膜绒面结构的影响,获得了适合薄膜太阳能电池的绒面ZnO透明导电薄膜。当压力控制在1.92Pa左右,衬底温度150～170℃范围内沉积的薄膜具有最佳的绒面和较低的电阻率,电阻率可达5.57×10-4Ω·cm,载流子浓度2.2×1020cm-3,霍尔迁移率40.1cm2/V·s,在可见光范围平均透过率超过85%。The smooth ZnO film with high conductivity and high optical transmission was obtained by mid-frequency pulse magnetron sputtering. The textured ZnO Was obtained by weak acid chemical etching for short period of time. Effects of the sputtering pressure and substrate temperature on the structure of of textured ZnO were studied. When the pressure is controlled around 1.92 Pa and the temperature is 150-170 ℃, the textured ZnO transparent conductive thin films suitable for thin film solar cell were successfully obtained. The results show that low resistivity is 5.57×10^-4Ω·cm, carrier concentration is 2.2×10^20cm^-3, Hall mobility is 40.1 cm^2/V·s and average optical transmittance is over 85% within visible light.

关 键 词：中频脉冲溅射 绒面ZnO 透明导电膜 腐蚀 结构 

分 类 号：TN304.055[电子电信—物理电子学]