高温超导涂层导体CeO_2缓冲层的化学溶液法制备及其热反应过程研究  

PREPARATION OF CeO_2 BUFFER LAYER BY CHEMICAL SOLUTION FOR COATED CONDUCTOR AND INVESTIGATION ON ITS THERMAL REACTION PROCESS

作　　者：潘成远[1] 蔡传兵[1] 应利良[1] 高波[1] 刘志勇[1] 鲁玉明[1] 刘金磊[1] 

机构地区：[1]上海大学物理系,上海200444

出　　处：《低温物理学报》2008年第2期111-115,共5页Low Temperature Physical Letters

基　　金：国家自然科学基金(项目编号:50672057);上海市重点学科建设基金(项目编号:T0104);上海市浦江人才计划基金(项目编号:5PJ14048);上海市重点科技攻关基金(项目编号:055211003)资助的课题~~

摘　　要：本文通过化学溶液法在双轴织构的金属Ni-W衬底上外延生长了CeO2超导涂层导体缓冲层薄膜．X衍射极图表明其面内外织构良好．扫描电子显微镜和原子力显微镜观察薄膜表面光滑、平整且粗糙度低．采用差热分析研究了升温速率及样品质量对前驱溶液热反应过程的影响，结果表明其热反应主要经历了三个过程，其中吸附水的脱去和醋酸组的解离分别发生在110-140℃与230-240℃两个温度范围内，且受升温速率的影响很小，表明这两个反应都在较短的时间内完成．而发生在250-500℃温度段的氧化合成反应则需要较长的时间，其反应结束温度与升温速率近似成线性增加．X衍射分析进一步证实了上述三个热反应过程，当温度达到700℃时CeO2可以得到完好的结晶．In the present work, the biaxially textured CeO2 buffer layers are prepared on Ni-W substrates by chemical solution method. Detailed X-ray pole figure indicates that the CeO2 films have excellent out-of-plane and in-plane textures. Atomic force microscopy （AFM） and scanning electron microscopy （SEM） show that the CeO2 films are fairly flat with low roughness. The influence of heating rate and precursor mass on the thermal reaction process are also studied by differential thermal analysis （DTA）. The DTA curves reveal that there are mainly three reactions in the process. Two endothermic reactions emerge at the ranges of 110-140℃ and 230-240℃, respectively. They are hardly affected by heating rate and samples mass, implying that they are able to complete in a short time, which may be attributed to the release of absorbed water and the removal of the acetate groups. However, the strong exothermic reaction with complicated decomposition and oxidation occurred at the temperatures of 250 - 450℃ needs more time to finish as the returning temperature is almost linear with the heating rate. XRD analysis for reaction finals at various temperatures shows that the CeO2 are well crystallized at the temperatures more than 700℃.

关 键 词：双轴织构 涂层导体 缓冲层 差热分析 

分 类 号：O511.3[一般工业技术—材料科学与工程]