OTFT with Bilayer Gate Insulator and Modificative Electrode  

具有双绝缘层和修饰电极的薄膜场效应晶体管(英文)

作　　者：白钰[1] 哈克[1] 鲁富翰[1] 蒋雪茵[1] 张志林[1] 

机构地区：[1]上海大学材料学院,上海201800

出　　处：《Journal of Semiconductors》2008年第4期650-654,共5页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:90202034,60477014,60577041);国家重点基础研究发展规划(批准号:2002CB613400)资助项目~~

摘　　要：An organic thin-film transistor （OTFT） with an OTS/SiO2 bilayer gate insulator and a MoO3/AI electrode configuration between gate insulator and source/drain electrodes has been investigated. A thermally grown SiO2 layer is used as the OTFT gate dielectric and copper phthalocyanine（CuPc） is used as an active layer. This OTS/SiO2 bilayer gate insulator configuration increases the field-effect mobility, reduces the threshold voltage, and improves the on/off ratio simultaneously. The device with a MoO3/Al electrode has shown similar Ids compared to the device with an Au electrode at the same gate voltage. Our results indicate that using a double-layer of electrodes and a double-layer of insulators is an effective way to improve OTFT performance.研究了具有OTS/SiO2双绝缘层结构及MoO3/Al电极结构的有机薄膜晶体管.器件是以热生长的SiO2作为有机薄膜晶体管的栅绝缘层,酞菁铜作为有源层的.OTS/SiO2双绝缘层的结构提高了器件的场效应迁移率和开关电流比,降低了阈值电压.实验表明在同样的栅极电压下,具有MoO3/Al电极的器件和金电极的器件有着相似的源漏输出电流.结果显示具有OTS/SiO2双绝缘层及MoO3/Al电极结构的器件能有效改进有机薄膜晶体管的性能.

关 键 词：organic thin film transistor modified electrode bilayer insulator MOBILITY 

分 类 号：TN386[电子电信—物理电子学]