适于硬开关变流器的IGCT／二极管综合模型  

A Compositive Model of IGCT/Diode for Hard-Switching Converters

作　　者：范子超 刘文华[2] 宋强[2] 李建国[2] 

机构地区：[1]龙源电力集团公司,北京100034 [2]清华大学电机工程与应用电子技术系,北京100084

出　　处：《电工技术学报》2008年第3期41-46,91,共7页Transactions of China Electrotechnical Society

基　　金：国家重点基础研究发展规划973资助项目(2004CB217907)

摘　　要：随着装置可靠性要求的不断提高,在大功率变流器中考虑器件特性具有重要意义。本文给出了在硬开关条件下应用器件功能模型的一般化方法,并以当前研究较少的IGCT为例,阐述了开通电压和关断电流的确定方法。在此基础上,提出了一种将全控器件与其反并联二极管综合考虑的功能模型,可用于仿真变流器器件电压电流波形、估算装置损耗。此模型应用于H桥链节的背靠背等价试验中,试验结果与仿真波形吻合,实测损耗与估算结果一致,验证了其可行性和正确性。With the continuous improvement of reliability requirements, it is of great significance to research the switches＇ behaviors in high-power converter. This paper firstly presents the fundamentals for using switch functional model in a hard-switching circuit. And the mathematic functions are obtained and derived to describe turning-on voltage and turning-off current for IGCTs and power diodes. Then, a compositive model is proposed, which gives synthetic attentions to the IGCT and its antiparallel diode. Thus, the model can facilitate the simulation of voltage source converters. Lastly, the model is applied in a back-to-back test, and its simulation waveforms and the power loss coincide with the test results well.

关 键 词：IGCT 功能模型 开关损耗 等价试验 

分 类 号：TM464[电气工程—电器]